From a European perspective, the proposed activities in SERENA will complement and strengthen already ongoing research activities. Furthermore, the SERENA will build from previous efforts and is connected to other related projects:

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expandInRel-NPower
      The InRel-NPower project (H2020-NMBP-2016, GA No. 720527) focuses on the reliability of GaN based switching devices operating at 650V, based on main-stream GaN-on-Si on the one hand and exploratory work on AlN-based devices on the other hand.

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expandTWEETHER
      The project will develop high spectrum and energy efficient W-band (92-95GHz) technology, based on a novel traveling wave tube power amplifier.

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expandM3TERA
      The topic of the project is “Micro machined terahertz systems -a new heterogeneous integration platform enabling the commercialization of the THz frequency spectrum”.

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expandFlex5Gware
      The aim of the project is to develop “Flexible and efficient hardware/software platforms for 5G network elements and devices”.

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expandmmMAGIC
      The project addresses “Millimetre-Wave Based Mobile Radio Access Network for Fifth Generation Integrated Communications”. The main objective is to develop a new radio interface, including novel network management functions and architecture components will be proposed, taking as guidance 5G PPP’s KPI and exploiting the use of novel adaptive and cooperative beam-forming and tracking techniques to address the challenges of mm-wave mobile propagation.

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expandcar2tera
      The project addresses two areas of research and development: in-cabin radar and onboard, high speed data communications. Car2TERA will focus on sub-THz, large bandwidth technologies for advanced in-cabin sensor systems, sensor fusion and high-speed data links and combine the results of recent achievements.

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expandGaNonCMOS
      The GaN-on-CMOS project focuses on Point-of-Load conversion systems for server applications. The project will develop highly efficient 48V to 1V conversion systems, based on GaN HEMT technology, to be integrated in close proximity to the CPU. EpiGaN is involved as supplier of GaN epitaxial material to enable the switching components.

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